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Width: 1.4 mm
Height: 1 mm
Length: 3 mm
Technology: Si
Unit Weight: 8 mg
Configuration: Single
Mounting Style: SMD/SMT
Transistor Polarity: NPN, PNP
Pd - Power Dissipation: 300 mW
DC Current Gain hFE Max: 350 at 100 mA, 2 V
Gain Bandwidth Product fT: 230 MHz
Emitter- Base Voltage VEBO: 5 V
Collector- Base Voltage VCBO: 40 V
Continuous Collector Current: 2 A
Maximum DC Collector Current: 1 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 65 C
DC Collector/Base Gain hfe Min: 350 at 100 mA, 2 V, 300 at 500 mA, 2 V, 300 at 1 A, 2 V, 150 at 2 A, 2 V
Collector- Emitter Voltage VCEO Max: 40 V
Collector-Emitter Saturation Voltage: 240 mV
