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Width: 2.1 mm
Height: 0.61 mm
Length: 2.1 mm
Technology: Si
Unit Weight: 8 mg
Configuration: Single
Mounting Style: SMD/SMT
Transistor Polarity: NPN
Pd - Power Dissipation: 2.1 W
DC Current Gain hFE Max: 425
Gain Bandwidth Product fT: 155 MHz
Emitter- Base Voltage VEBO: 6 V
Collector- Base Voltage VCBO: 80 V
Continuous Collector Current: 5.6 A
Maximum DC Collector Current: 5.6 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
DC Collector/Base Gain hfe Min: 45
Collector- Emitter Voltage VCEO Max: 80 V
Collector-Emitter Saturation Voltage: 230 mV
