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Width: 1.3 mm
Height: 0.6 mm
Length: 1.7 mm
Technology: Si
Unit Weight: 2.800 mg
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Polarity: NPN, PNP
Pd - Power Dissipation: 300 mW
DC Current Gain hFE Max: 200 at 10 mA, 2 V
Gain Bandwidth Product fT: 420 MHz, 280 MHz
Emitter- Base Voltage VEBO: 6 V
Collector- Base Voltage VCBO: 15 V
Maximum DC Collector Current: 500 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 65 C
DC Collector/Base Gain hfe Min: 200 at 10 mA, 2 V
Collector- Emitter Voltage VCEO Max: 12 V
Collector-Emitter Saturation Voltage: 220 mV
