Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Direct access to our certified experts
Technology: Si
Unit Weight: 1.232 mg
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Qg - Gate Charge: 1.05 nC, 1.2 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel, P-Channel
Pd - Power Dissipation: 410 mW
Vgs - Gate-Source Voltage: - 8 V, + 8 V
Id - Continuous Drain Current: 590 mA, 410 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 670 mOhms, 1.4 Ohms
Vds - Drain-Source Breakdown Voltage: 30 V
Vgs th - Gate-Source Threshold Voltage: 450 mV, 950 mV
