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Width: 2 mm
Height: 0.65 mm
Length: 2 mm
Fall Time: 7 ns, 7 ns
Rise Time: 20 ns, 20 ns
Technology: Si
Unit Weight: 6.750 mg
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 2 N-Channel
Qg - Gate Charge: 5 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 8.33 W
Vgs - Gate-Source Voltage: - 12 V, + 12 V
Typical Turn-On Delay Time: 9 ns, 9 ns
Typical Turn-Off Delay Time: 19 ns, 19 ns
Id - Continuous Drain Current: 3.1 A, 31 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 12 S, 12 S
Rds On - Drain-Source Resistance: 55 mOhms, 55 mOhms
Vds - Drain-Source Breakdown Voltage: 30 V
Vgs th - Gate-Source Threshold Voltage: 750 mV
