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Fall Time: 6 ns
Rise Time: 2 ns
Technology: Si
Unit Weight: 9 mg
Channel Mode: Enhancement
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: 1 P-Channel
Qg - Gate Charge: 290 pC
Number of Channels: 1 Channel
Transistor Polarity: P-Channel
Pd - Power Dissipation: 625 mW
Vgs - Gate-Source Voltage: - 8 V, + 8 V
Typical Turn-On Delay Time: 1 ns
Typical Turn-Off Delay Time: 4 ns
Id - Continuous Drain Current: 530 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 700 mS
Rds On - Drain-Source Resistance: 1.4 Ohms
Vds - Drain-Source Breakdown Voltage: 20 V
Vgs th - Gate-Source Threshold Voltage: 950 mV
