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Vgs(th): 1.25 V
Vgs (Max): 12V
Gate Charge (Qg): 7.8nC
Power consumption: 500mW|6.25W
Technology System: MOSFET(Metal Oxide)
Drain to Source voltage: 20V
Continuous drain current: 3.2A
Input Capacitance (Ciss): 602pF
Operating temperature range: -55 to 150C
Field-effect transistor type: P-CH
Drain to Source on-state resistance: 85mOhm
Drive Voltage (Max Rds On, Min Rds On): 2.5|4.5V
