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Width: 1.35 mm
Height: 1 mm
Length: 2.2 mm
Technology: Si
Unit Weight: 5 mg
Configuration: Single
Mounting Style: SMD/SMT
Transistor Polarity: NPN
Pd - Power Dissipation: 200 mW
DC Current Gain hFE Max: 50 at 10 mA, 2 V
Gain Bandwidth Product fT: 100 MHz
Emitter- Base Voltage VEBO: 4 V
Collector- Base Voltage VCBO: 60 V
Maximum DC Collector Current: 500 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 65 C
DC Collector/Base Gain hfe Min: 50 at 10 mA, 2 V, 50 at 100 mA, 1 V
Collector- Emitter Voltage VCEO Max: 60 V
Collector-Emitter Saturation Voltage: 250 mV
