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Fall Time: 19 ns
Rise Time: 17 ns
Technology: Si
Unit Weight: 8 mg
Channel Mode: Enhancement
Mounting Style: SMD/SMT
Transistor Type: 1 P-Channel
Qg - Gate Charge: 16 nC
Number of Channels: 1 Channel
Transistor Polarity: P-Channel
Pd - Power Dissipation: 610 mW
Vgs - Gate-Source Voltage: - 12 V, + 12 V
Typical Turn-On Delay Time: 6 ns
Typical Turn-Off Delay Time: 23 ns
Id - Continuous Drain Current: 5 A
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 20 S
Rds On - Drain-Source Resistance: 38 mOhms
Vds - Drain-Source Breakdown Voltage: 20 V
Vgs th - Gate-Source Threshold Voltage: 1.3 V
