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Vgs(th): 0.95V
Vgs (Max): 8V
Gate Charge (Qg): 0.68nC
Power consumption: 360mW|2.7W
Technology System: MOSFET(Metal Oxide)
Drain to Source voltage: 20V
Continuous drain current: 1A
Input Capacitance (Ciss): 83pF
Operating temperature range: -55 to 150C
Field-effect transistor type: N-CH
Drain to Source on-state resistance: 380mOhm
Drive Voltage (Max Rds On, Min Rds On): 1.8|4.5V
