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Technology: Si
Unit Weight: 1.234 mg
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Polarity: NPN, PNP
Pd - Power Dissipation: 350 mW
Gain Bandwidth Product fT: 230 MHz, 180 MHz
Emitter- Base Voltage VEBO: 10 V
Collector- Base Voltage VCBO: 50 V
Continuous Collector Current: 100 mA
Maximum DC Collector Current: 100 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
DC Collector/Base Gain hfe Min: 80
Collector- Emitter Voltage VCEO Max: 50 V
Collector-Emitter Saturation Voltage: 150 mV
