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Nexperia PSMN020-100YS,115 MOSFETs N-channel 30 V 18.1 mâ„¦ logic level MOSFET in LFPAK33 using TrenchMOS Technology

Name: Nexperia PSMN020-100YS,115 MOSFETs N-channel 30 V 18.1 mâ„¦ logic level MOSFET in LFPAK33 using TrenchMOS Technology
Brand: Nexperia

ModelPSMN020-100YS,115

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Technology: Si

Unit Weight: 91.420 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Mounting Style: SMD/SMT

Qg - Gate Charge: 41 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 106 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Id - Continuous Drain Current: 43 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 37 mOhms

Vds - Drain-Source Breakdown Voltage: 100 V

Vgs th - Gate-Source Threshold Voltage: 4.6 V