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Width: 1.3 mm
Height: 0.6 mm
Length: 1.6 mm
Fall Time: 30 us
Rise Time: 30 us
Wavelength: 880 nm
Output Type: Phototransistor
Unit Weight: 2.500 g
Mounting Style: SMD/SMT
Sensing Method: Reflective
Sensing Distance: 0.7 mm
Number of Channels: 1 Channel
If - Forward Current: 4 mA
Vf - Forward Voltage: 1.3 V
Vr - Reverse Voltage: 6 V
Pd - Power Dissipation: 60 mW
Maximum Collector Current: 10 mA
Maximum Operating Temperature: + 85 C
Minimum Operating Temperature: - 30 C
Collector- Emitter Voltage VCEO Max: 16 V
