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Gain: 25 dB
Technology: Si
Unit Weight: 8.488 g
Output Power: 600 W
Configuration: Dual
Mounting Style: SMD/SMT
Number of Channels: 2 Channel
Operating Frequency: 1.8 MHz to 600 MHz
Transistor Polarity: N-Channel
Pd - Power Dissipation: 1.667 kW
Vgs - Gate-Source Voltage: + 10 V
Maximum Operating Temperature: + 150 C
Vds - Drain-Source Breakdown Voltage: 130 V
Vgs th - Gate-Source Threshold Voltage: 2.7 V
