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Technology: Si
Unit Weight: 1 g
Configuration: Single
Mounting Style: SMD/SMT
Transistor Polarity: NPN
Pd - Power Dissipation: 600 mW
DC Current Gain hFE Max: 800 at 50 mA, 2 V
Gain Bandwidth Product fT: 440 MHz
Emitter- Base Voltage VEBO: 5 V
Collector- Base Voltage VCBO: 20 V
Continuous Collector Current: 1 A
Maximum DC Collector Current: 1 A
Maximum Operating Temperature: + 150 C
DC Collector/Base Gain hfe Min: 300 at 50 mA, 2 V
Collector- Emitter Voltage VCEO Max: 15 V
Collector-Emitter Saturation Voltage: 140 mV
