Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Direct access to our certified experts
Technology: Si
Unit Weight: 340 mg
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: PNP
Pd - Power Dissipation: 1 W
DC Current Gain hFE Max: 400 at - 100 mA, - 5 V
Gain Bandwidth Product fT: 120 MHz
Emitter- Base Voltage VEBO: 6 V
Collector- Base Voltage VCBO: 180 V
Maximum DC Collector Current: 1.5 A
Maximum Operating Temperature: + 150 C
DC Collector/Base Gain hfe Min: 140
Collector- Emitter Voltage VCEO Max: 160 V
Collector-Emitter Saturation Voltage: 200 mV
