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Technology: Si
Unit Weight: 300 mg
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: PNP
Pd - Power Dissipation: 25 W
DC Current Gain hFE Max: 450
Gain Bandwidth Product fT: 230 MHz
Emitter- Base Voltage VEBO: 6 V
Collector- Base Voltage VCBO: 50 V
Continuous Collector Current: - 10 A
Maximum DC Collector Current: 10 A
Maximum Operating Temperature: + 150 C
DC Collector/Base Gain hfe Min: 150
Collector- Emitter Voltage VCEO Max: 50 V
Collector-Emitter Saturation Voltage: 250 mV
