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Technology: Si
Unit Weight: 281.120 mg
Configuration: Single
Mounting Style: SMD/SMT
Transistor Polarity: NPN
Pd - Power Dissipation: 800 mW
DC Current Gain hFE Max: 600
Gain Bandwidth Product fT: 390 MHz
Emitter- Base Voltage VEBO: 6.5 V
Collector- Base Voltage VCBO: 100 V
Continuous Collector Current: 3 A
Maximum DC Collector Current: 3 A
Maximum Operating Temperature: + 150 C
Collector- Emitter Voltage VCEO Max: 60 V
Collector-Emitter Saturation Voltage: 100 mV
