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onsemi 2SD1628G-TD-E BJTs - Bipolar Transistors Bipolar Transistor, 20V, 5A, Low VCE(sat), NPN Single PCP hFE 280-560

Name: onsemi 2SD1628G-TD-E BJTs - Bipolar Transistors Bipolar Transistor, 20V, 5A, Low VCE(sat), NPN Single PCP hFE 280-560
Brand: onsemi

Model2SD1628G-TD-E

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Technology: Si

Unit Weight: 51.670 mg

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 500 mW

DC Current Gain hFE Max: 560 at 500 mA, 2 V

Gain Bandwidth Product fT: 120 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 60 V

Maximum DC Collector Current: 5 A

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 120

Collector- Emitter Voltage VCEO Max: 20 V

Collector-Emitter Saturation Voltage: 500 mV