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Technology: Si
Unit Weight: 1.800 g
Configuration: Single
Mounting Style: SMD/SMT
Transistor Polarity: NPN
Pd - Power Dissipation: 1 W
DC Current Gain hFE Max: 400
Gain Bandwidth Product fT: 150 MHz
Emitter- Base Voltage VEBO: 6 V
Collector- Base Voltage VCBO: 60 V
Continuous Collector Current: 5 A
Maximum DC Collector Current: 3 A
Maximum Operating Temperature: + 150 C
DC Collector/Base Gain hfe Min: 200
Collector- Emitter Voltage VCEO Max: 50 V
Collector-Emitter Saturation Voltage: 190 mV
