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Technology: Si
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: Bipolar
Operating Frequency: 4.5 GHz
Transistor Polarity: NPN
Pd - Power Dissipation: 400 mW
Emitter- Base Voltage VEBO: 3 V
Continuous Collector Current: 70 mA
Maximum Operating Temperature: + 150 C
DC Collector/Base Gain hfe Min: 100 at 10 mA, 5 V
Collector- Emitter Voltage VCEO Max: 10 V
