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Vgs (Max): 10V
Gate Charge (Qg): 1.4nC
Power consumption: 250mW
Technology System: MOSFET(Metal Oxide)
Drain to Source voltage: 50V
Continuous drain current: 70mA
Input Capacitance (Ciss): 7.4pF
Operating temperature range: 150C
Field-effect transistor type: P-CH
Drain to Source on-state resistance: 23Ohm
Drive Voltage (Max Rds On, Min Rds On): 1.5|4V
