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Width: 1.25 mm
Height: 0.9 mm
Length: 2 mm
Technology: Si
Unit Weight: 7.500 mg
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Polarity: NPN, PNP
Pd - Power Dissipation: 380 mW
DC Current Gain hFE Max: 475
Gain Bandwidth Product fT: 100 MHz
Emitter- Base Voltage VEBO: 6 V, 5 V
Collector- Base Voltage VCBO: 50 V
Continuous Collector Current: 100 mA
Maximum DC Collector Current: 100 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
DC Collector/Base Gain hfe Min: 200
Collector- Emitter Voltage VCEO Max: 45 V
Collector-Emitter Saturation Voltage: 600 mV, 650 mV
