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Technology: Si
Unit Weight: 2 g
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: NPN
Pd - Power Dissipation: 12.5 W
DC Current Gain hFE Max: 250
Emitter- Base Voltage VEBO: 5 V
Collector- Base Voltage VCBO: 45 V
Continuous Collector Current: 1.5 A
Maximum DC Collector Current: 1.5 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
DC Collector/Base Gain hfe Min: 25
Collector- Emitter Voltage VCEO Max: 45 V
Collector-Emitter Saturation Voltage: 500 mV
