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Technology: Si
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Polarity: NPN
Pd - Power Dissipation: 1.2 W
DC Current Gain hFE Max: 560
Gain Bandwidth Product fT: 500 MHz
Emitter- Base Voltage VEBO: 5 V
Collector- Base Voltage VCBO: 40 V
Maximum DC Collector Current: 1.5 A
Maximum Operating Temperature: + 150 C
DC Collector/Base Gain hfe Min: 200
Collector- Emitter Voltage VCEO Max: 30 V
Collector-Emitter Saturation Voltage: 150 mV
