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Type: Power MOSFET
FET Feature: Logic Level Gate
Mounting Type: Surface Mount
Power-Maximum: 1W
Operating temperature: -55 to 150C
Drain to Source voltage: 30V
Continuous drain current: 7.5A/10A
Current - Drain (Id) (25°C): 7.5|10A
Field-effect transistor type: 2N-Channel(Dual)
Gate Charge - (when applying Vgs): 14nC@10V
Drain to Source on-state resistance: 21.5mOhm/13mOhm
On Voltage - (Vgs when Id is applied): 3V@250uA
On Resistance - (Rds when Id,Vgs is applied): 45mOhm@25A|15V(Typ)
Input Capacitance - (Ciss when Vds is applied): 665pF@15V
