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Type: Power MOSFET
FET Feature: Logic Level Gate
Mounting Type: Surface Mount
Power-Maximum: 900mW
Operating temperature: -55 to 150C
Drain to Source voltage: 30V
Continuous drain current: 5.5A
Current - Drain (Id) (25°C): 5.5A
Field-effect transistor type: 2N-Channel(Dual)
Gate Charge - (when applying Vgs): 3.8nC@5V
Drain to Source on-state resistance: 38mOhm
On Voltage - (Vgs when Id is applied): 3V@250uA
On Resistance - (Rds when Id,Vgs is applied): 45mOhm@25A|15V(Typ)
Input Capacitance - (Ciss when Vds is applied): 412pF@15V
