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Vgs(th): 1.5 V
Vgs (Max): 8V
Gate Charge (Qg): 2.3nC
Power consumption: 350mW
Technology System: MOSFET(Metal Oxide)
Drain to Source voltage: 25V
Continuous drain current: 680mA
Input Capacitance (Ciss): 50pF
Operating temperature range: -55 to 150C
Field-effect transistor type: N-CH
Drain to Source on-state resistance: 450mOhm
Drive Voltage (Max Rds On, Min Rds On): 2.7|4.5V
