Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Direct access to our certified experts
Vgs(th): 1.5 V
Vgs (Max): -8V
Gate Charge (Qg): 1.5nC
Power consumption: 350mW
Technology System: MOSFET(Metal Oxide)
Drain to Source voltage: 25V
Continuous drain current: 460mA
Input Capacitance (Ciss): 63pF
Operating temperature range: -55 to 150C
Field-effect transistor type: P-CH
Drain to Source on-state resistance: 1.1Ohm
Drive Voltage (Max Rds On, Min Rds On): 2.7|4.5V
