Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Direct access to our certified experts
Vgs(th): 4 V
Vgs (Max): 25V
Gate Charge (Qg): 52nC
Power consumption: 227W
Technology System: MOSFET(Metal Oxide)
Drain to Source voltage: 150V
Continuous drain current: 33A
Input Capacitance (Ciss): 1600pF
Operating temperature range: -55 to 175C
Field-effect transistor type: N-CH
Drain to Source on-state resistance: 90mOhm
Drive Voltage (Max Rds On, Min Rds On): 10V
