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Width: 5.3 mm
Height: 21.08 mm
Length: 16.26 mm
Technology: Si
Unit Weight: 38 g
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: PNP
Pd - Power Dissipation: 200 W
Gain Bandwidth Product fT: 4 MHz
Emitter- Base Voltage VEBO: 5 V
Collector- Base Voltage VCBO: 400 V
Continuous Collector Current: 16 A
Maximum DC Collector Current: 16 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 65 C
DC Collector/Base Gain hfe Min: 20
Collector- Emitter Voltage VCEO Max: 250 V
Collector-Emitter Saturation Voltage: 3 V
