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Technology: Si
Unit Weight: 8 mg
Configuration: Single
Mounting Style: SMD/SMT
Transistor Polarity: N-Channel
Pd - Power Dissipation: 225 mW
Gate-Source Cutoff Voltage: - 3 V
Drain-Source Current at Vgs=0: 5 mA to 30 mA
Vgs - Gate-Source Breakdown Voltage: 30 V
Vds - Drain-Source Breakdown Voltage: 30 V
