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Width: 0.8 mm
Height: 0.5 mm
Length: 1.2 mm
Technology: Si
Unit Weight: 1.275 mg
Configuration: Single
Mounting Style: SMD/SMT
Transistor Polarity: NPN
Pd - Power Dissipation: 640 mW
DC Current Gain hFE Max: 60 at 4 mA, 10 V
Gain Bandwidth Product fT: 650 MHz
Emitter- Base Voltage VEBO: 3 V
Collector- Base Voltage VCBO: 30 V
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
DC Collector/Base Gain hfe Min: 60 at 4 mA, 10 V
Collector- Emitter Voltage VCEO Max: 25 V
Collector-Emitter Saturation Voltage: 500 mV
