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onsemi NJVMJD253T4G BJTs - Bipolar Transistors 4.0 A, 100 V PNP Bipolar Power Transistor

Name: onsemi NJVMJD253T4G BJTs - Bipolar Transistors 4.0 A, 100 V PNP Bipolar Power Transistor
Brand: onsemi

ModelNJVMJD253T4G

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Technology: Si

REACH - SVHC: Details

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Polarity: NPN, PNP

Pd - Power Dissipation: 12.5 W

DC Current Gain hFE Max: 180

Gain Bandwidth Product fT: 40 MHz

Emitter- Base Voltage VEBO: 7 V

Collector- Base Voltage VCBO: 100 V

Continuous Collector Current: 4 A

Maximum DC Collector Current: 8 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 40

Collector- Emitter Voltage VCEO Max: 100 V

Collector-Emitter Saturation Voltage: 600 mV