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onsemi NJVMJD31CT4G BJTs - Bipolar Transistors 3.0 A, 100 V NPN Bipolar Power Transistor

Name: onsemi NJVMJD31CT4G BJTs - Bipolar Transistors 3.0 A, 100 V NPN Bipolar Power Transistor
Brand: onsemi

ModelNJVMJD31CT4G

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Technology: Si

Unit Weight: 260.400 mg

REACH - SVHC: Details

Qualification: AEC-Q100

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 15 W

Emitter- Base Voltage VEBO: 5 V

Continuous Collector Current: 3 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

Collector- Emitter Voltage VCEO Max: 100 V