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onsemi NJVMJD44H11RLG BJTs - Bipolar Transistors 8 A, 80 V NPN Bipolar Power Transistor

Name: onsemi NJVMJD44H11RLG BJTs - Bipolar Transistors 8 A, 80 V NPN Bipolar Power Transistor
Brand: onsemi

ModelNJVMJD44H11RLG

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Technology: Si

Unit Weight: 320 mg

REACH - SVHC: Details

Configuration: Single

Qualification: AEC-Q100

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 20 W

Gain Bandwidth Product fT: 85 MHz

Emitter- Base Voltage VEBO: 5 V

Continuous Collector Current: 8 A

Maximum DC Collector Current: 8 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 60

Collector- Emitter Voltage VCEO Max: 80 V

Collector-Emitter Saturation Voltage: 1 V