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onsemi NJVNJD2873T4G BJTs - Bipolar Transistors 2.0 A, 50 V NPN Bipolar Power Transistor

Name: onsemi NJVNJD2873T4G BJTs - Bipolar Transistors 2.0 A, 50 V NPN Bipolar Power Transistor
Brand: onsemi

ModelNJVNJD2873T4G

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Technology: Si

Unit Weight: 2 g

REACH - SVHC: Details

Configuration: Single

Qualification: AEC-Q100

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 15 W

DC Current Gain hFE Max: 360

Gain Bandwidth Product fT: 65 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 50 V

Continuous Collector Current: 2 A

Maximum DC Collector Current: 2 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 65 C

Collector- Emitter Voltage VCEO Max: 50 V

Collector-Emitter Saturation Voltage: 300 mV