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onsemi NJW44H11G BJTs - Bipolar Transistors NPN Power Bipolar Transistor, 80 V, 10 A NPN TO-3P POWER TRANS

Name: onsemi NJW44H11G BJTs - Bipolar Transistors NPN Power Bipolar Transistor, 80 V, 10 A NPN TO-3P POWER TRANS
Brand: onsemi

ModelNJW44H11G

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Technology: Si

Unit Weight: 5.500 g

REACH - SVHC: Details

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 120 W

DC Current Gain hFE Max: 320

Gain Bandwidth Product fT: 85 MHz

Emitter- Base Voltage VEBO: 5 V

Continuous Collector Current: 10 A

Maximum DC Collector Current: 20 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 80

Collector- Emitter Voltage VCEO Max: 80 V

Collector-Emitter Saturation Voltage: 1 V