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Technology: Si
Unit Weight: 13.430 mg
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Polarity: NPN
Pd - Power Dissipation: 300 mW
DC Current Gain hFE Max: 300, 600
Gain Bandwidth Product fT: 300 MHz, 100 MHz
Emitter- Base Voltage VEBO: 6 V, 5 V
Collector- Base Voltage VCBO: 60 V, 50 V
Continuous Collector Current: 200 mA, 500 mA
Maximum DC Collector Current: 200 mA, 500 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
DC Collector/Base Gain hfe Min: 30 at 100 mA, 1 V, 40 at 500 mA, 1 V
Collector- Emitter Voltage VCEO Max: 40 V, 45 V
Collector-Emitter Saturation Voltage: 300 mV, 700 mV
