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Width: 0.8 mm
Height: 0.5 mm
Length: 1.2 mm
Technology: Si
Unit Weight: 13 mg
Configuration: Single
Mounting Style: SMD/SMT
Transistor Polarity: PNP
Pd - Power Dissipation: 625 mW
DC Current Gain hFE Max: 200 at 10 mA, 2 V
Emitter- Base Voltage VEBO: 5 V
Collector- Base Voltage VCBO: 12 V
Continuous Collector Current: - 1 A
Maximum DC Collector Current: 1 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
DC Collector/Base Gain hfe Min: 80
Collector- Emitter Voltage VCEO Max: 12 V
Collector-Emitter Saturation Voltage: 350 mV
