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Technology: Si
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Polarity: NPN
Pd - Power Dissipation: 2.27 W
DC Current Gain hFE Max: 250
Gain Bandwidth Product fT: 180 MHz
Emitter- Base Voltage VEBO: 7 V
Collector- Base Voltage VCBO: 20 V
Continuous Collector Current: 2 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
DC Collector/Base Gain hfe Min: 100
Collector- Emitter Voltage VCEO Max: 20 V
Collector-Emitter Saturation Voltage: 330 mV
