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Width: 1.5 mm
Height: 0.94 mm
Length: 3 mm
Technology: Si
Unit Weight: 20 mg
Configuration: Single
Mounting Style: SMD/SMT
Transistor Polarity: PNP
Pd - Power Dissipation: 545 mW
DC Current Gain hFE Max: 400
Gain Bandwidth Product fT: 100 MHz
Emitter- Base Voltage VEBO: 6 V
Collector- Base Voltage VCBO: 30 V
Continuous Collector Current: - 3 A
Maximum DC Collector Current: 3 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Collector- Emitter Voltage VCEO Max: 20 V
Collector-Emitter Saturation Voltage: 250 mV
