Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Direct access to our certified experts
Width: 4 mm
Height: 1.5 mm
Length: 5 mm
Technology: Si
Unit Weight: 143 mg
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Polarity: PNP
Pd - Power Dissipation: 783 mW
DC Current Gain hFE Max: 250 at 10 mA, 2 V
Gain Bandwidth Product fT: 100 MHz
Emitter- Base Voltage VEBO: 7 V
Collector- Base Voltage VCBO: 40 V
Maximum DC Collector Current: 3 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
DC Collector/Base Gain hfe Min: 250 at 10 mA, 2 V, 220 at 500 mA, 2 V, 180 at 1 A, 2 V, 150 at 2 A, 2 V
Collector- Emitter Voltage VCEO Max: 40 V
Collector-Emitter Saturation Voltage: 135 mV
