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onsemi NSV1C200LT1G BJTs - Bipolar Transistors Low VCE(sat) Transistor, PNP, 100 V, 2.0 A

Name: onsemi NSV1C200LT1G BJTs - Bipolar Transistors Low VCE(sat) Transistor, PNP, 100 V, 2.0 A
Brand: onsemi

ModelNSV1C200LT1G

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Technology: Si

Unit Weight: 8 mg

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 490 mW

DC Current Gain hFE Max: 360 at - 500 mA, - 2 V

Gain Bandwidth Product fT: 120 MHz

Emitter- Base Voltage VEBO: 7 V

Collector- Base Voltage VCBO: 140 V

Continuous Collector Current: - 2 A

Maximum DC Collector Current: 2 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 120

Collector- Emitter Voltage VCEO Max: 100 V

Collector-Emitter Saturation Voltage: 950 mV