Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Direct access to our certified experts
Technology: Si
Unit Weight: 8 mg
Configuration: Single
Qualification: AEC-Q101
Mounting Style: SMD/SMT
Transistor Polarity: NPN
Pd - Power Dissipation: 490 mW
DC Current Gain hFE Max: 360 at 500 mA, 2 V
Gain Bandwidth Product fT: 110 MHz
Emitter- Base Voltage VEBO: 7 V
Collector- Base Voltage VCBO: 140 V
Continuous Collector Current: 2 A
Maximum DC Collector Current: 2 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
DC Collector/Base Gain hfe Min: 120
Collector- Emitter Voltage VCEO Max: 100 V
Collector-Emitter Saturation Voltage: 30 mV
