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onsemi NSV40300MZ4T1G BJTs - Bipolar Transistors 3.0 A, 40 V Low VCE(sat) PNP Power Bipolar Junction Transistor AEC-Q101 Qualified

Name: onsemi NSV40300MZ4T1G BJTs - Bipolar Transistors 3.0 A, 40 V Low VCE(sat) PNP Power Bipolar Junction Transistor AEC-Q101 Qualified
Brand: onsemi

Manufactureronsemi(View more products from this manufacturer)

ModelNSV40300MZ4T1G

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Technology: Si

Unit Weight: 110 mg

REACH - SVHC: Details

Configuration: Single

Qualification: AEC-Q100

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 2 W

Gain Bandwidth Product fT: 160 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 40 V

Continuous Collector Current: 3 A

Maximum DC Collector Current: 3 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 40 V

Collector-Emitter Saturation Voltage: 400 mV