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onsemi NSV40301MZ4T3G BJTs - Bipolar Transistors 3.0 A, 40 V Low VCE(sat) NPN Power Bipolar Junction Transistor AEC-Q101 Qualified

Name: onsemi NSV40301MZ4T3G BJTs - Bipolar Transistors 3.0 A, 40 V Low VCE(sat) NPN Power Bipolar Junction Transistor AEC-Q101 Qualified
Brand: onsemi

Manufactureronsemi(View more products from this manufacturer)

ModelNSV40301MZ4T3G

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Technology: Si

REACH - SVHC: Details

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 2 W

DC Current Gain hFE Max: 500

Gain Bandwidth Product fT: 215 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 40 V

Continuous Collector Current: 3 A

Maximum DC Collector Current: 5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 40 V