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onsemi NSV40501UW3T2G BJTs - Bipolar Transistors Low VCE(sat) Transistor, NPN, 40 V, 5.0 A

Name: onsemi NSV40501UW3T2G BJTs - Bipolar Transistors Low VCE(sat) Transistor, NPN, 40 V, 5.0 A
Brand: onsemi

ModelNSV40501UW3T2G

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Technology: Si

Unit Weight: 17 mg

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 875 mW

Gain Bandwidth Product fT: 150 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 40 V

Continuous Collector Current: 5 A

Maximum DC Collector Current: 5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 200

Collector- Emitter Voltage VCEO Max: 40 V

Collector-Emitter Saturation Voltage: 150 mV