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onsemi NSVF6001SB6T1G RF Bipolar Transistors RF Transistor, NPN Single, 12 V, 100 mA, fT = 6.7 GHz

Name: onsemi NSVF6001SB6T1G RF Bipolar Transistors RF Transistor, NPN Single, 12 V, 100 mA, fT = 6.7 GHz
Brand: onsemi

ModelNSVF6001SB6T1G

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Technology: Si

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: Bipolar

Operating Frequency: 6.7 GHz

Transistor Polarity: NPN

Pd - Power Dissipation: 800 mW

Emitter- Base Voltage VEBO: 2 V

Continuous Collector Current: 100 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 90 at 30 mA, 9 V

Collector- Emitter Voltage VCEO Max: 12 V