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Technology: Si
Configuration: Single
Mounting Style: SMD/SMT
Transistor Polarity: PNP
Pd - Power Dissipation: 420 mW
DC Current Gain hFE Max: 400
Gain Bandwidth Product fT: 120 MHz
Emitter- Base Voltage VEBO: 6 V
Collector- Base Voltage VCBO: 180 V
Continuous Collector Current: - 1 A
Maximum DC Collector Current: 1 A
Maximum Operating Temperature: + 150 C
DC Collector/Base Gain hfe Min: 100
Collector- Emitter Voltage VCEO Max: 160 V
Collector-Emitter Saturation Voltage: 100 mV
